2SC2206 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
2SC2206
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1254
s ^Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency f_T.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
C_EBO
5
V
Collector current
I_C
30
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
V_CBO
I_C = 10µA, I_E = 0
30
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
V_CEO
V_EBO
h_FE*
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CB = 10V, I_E = –1mA
20
V
5
V
70
220
Collector to emitter saturation voltage V_CE(sat)
I_C = 10mA, I_B = 1mA
0.1
V
Base to emitter voltage
V_BE
V_CE = 10V, I_C = 1mA
0.7
V
Transition frequency
f_T
V_CB = 10V, I_E = –1mA, f = 200MHz 150
300
MHz
Noise figure
NF
V_CB = 10V, I_E = –1mA, f = 5MHz
2.8
4
dB
Common emitter reverse transfer capacitance C_re
Reverse transfer impedance
Z_rb
V_CE = 10V, I_C = 1mA, f = 10.7MHz
V_CB = 10V, I_E = –1mA, f = 2MHz
1.5
pF
50
Ω
*_{hFE Rank classification}
Rank
B
h_FE
70 ~ 140
C
110 ~ 220
1