2SC2188 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For intermediate frequency amplification of TV image)

Transistor
2SC2188
Silicon NPN epitaxial planer type
For intermediate frequency amplification of TV image
s ^Features
q High transition frequency f_T.
q Satisfactory linearity of forward current transfer ratio h_FE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
45
V
Collector to emitter voltage V_CEO
35
V
Emitter to base voltage
V_EBO
4
V
Collector current
I_C
50
mA
Collector power dissipation P_C
600
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CEO
V_CBO
V_CE = 20V, I_B = 0
I_C = 10µA, I_E = 0
10
µA
45
V
Collector to emitter voltage
V_CEO
I_C = 1mA, I_B = 0
35
V
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
4
V
Forward current transfer ratio
h_FE
V_CB = 10V, I_E = –10mA
20
50
100
Collector to emitter saturation voltage V_CE(sat)
I_C = 20mA, I_B = 2mA
0.5
V
Transition frequency
f_T
V_CB = 10V, I_E = –10mA, f = 100MHz
300
500
MHz
Common emitter reverse transfer capacitance C_re
V_CE = 10V, I_C = 1mA
1.5
pF
Power gain
PG
V_CB = 10V, I_E = –10mA, f = 58MHz
18
dB
1