2SC1846 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Power Transistors
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0885
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Output of 3 W can be obtained by a complementary pair with
2SA0885
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ 3.16±0.1
8.0^{+–00..15}
Unit: mm
3.2±0.2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
45
V
Collector-emitter voltage (Base open) V_CEO
35
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
1
A
Peak collector current
I_CP
1.5
A
Collector power dissipation
P_C
1.2
W
5.0 ^*
Junction temperature
Storage temperature
T_j
150
°C
T_stg −55 to +150 °C
Note) *: With a 100 × 100 × 2 mm Al heat sink
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 1 mA, I_E = 0
45
Collector-emitter voltage (Base open) V_CEO I_C = 2 mA, I_B = 0
35
Collector-base cutoff current (Emitter open) I_CBO V_CB = 20 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = 20 V, I_B = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = 5 V, I_C = 0
Forward current transfer ratio
h_FE1 ^* V_CE = 10 V, I_C = 500 mA
85
h_FE2 V_CE = 5 V, I_C = 1 A
50
Collector-emitter saturation voltage
V_CE(sat) I_C = 500 mA, I_B = 50 mA
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
0.1
100
10
340
0.5
200
20
V
V
µA
µA
µA

V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
R
S
h_FE1
85 to 170 120 to 240 170 to 340
Publication date: February 2003
SJD00094BED
1