2SC1573 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)

Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA879
s ^Features
q High collector to emitter voltage V_CEO.
q High transition frequency f_T.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
2SC1573
250
Collector to
2SC1573A V_CBO
300
V
base voltage
2SC1573B
400
2SC1573
200
Collector to
2SC1573A V_CEO
300
V
emitter voltage
2SC1573B
400
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
100
mA
Collector current
I_C
70
mA
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
s ^{Electrical Characteristics (Ta=25˚C)}
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
Parameter
Collector cutoff current
Collector to emitter
voltage
2SC1573
2SC1573A
2SC1573B
Symbol
I_CBO
V_CEO
Conditions
V_CB = 12V, I_E = 0
I_C = 100µA, I_B = 0
min
typ
max Unit
2
µA
200
300
V
400
Emitter to base
voltage
2SC1573
2SC1573A
2SC1573B
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output
capacitance
2SC1573
2SC1573A
2SC1573B
V_EBO
h_FE*
V_CE(sat)
f_T
C_ob
5
I_E = 1µA, I_C = 0
7
V_CE = 10V, I_C = 5mA
30
I_C = 50mA, I_B = 5mA
V_CB = 10V, I_E = –10mA, f = 200MHz
50
V_CB = 10V, I_E = 0, f = 1MHz
V
220
1.2
V
80
MHz
5
10
pF
4
8
*_{hFE Rank classification}
Rank
P
Q
R
h_FE
30 ~ 100 60 ~ 150
*2SC1573 for Ranks Q and R only
100 ~ 220
1