2SC1568 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Power Transistors
2SC1568
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification
Complementary to 2SA0900
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Satisfactory operation performances and high efficiency with a low-
voltage power supply
• TO-126B package which incorporates a unique construction en-
abling installation to the heat sink without using insulation parts
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
18
V
Collector-emitter voltage (Base open) V_CEO
18
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
1
A
Peak collector current
I_CP
2
A
Collector power dissipation
P_C
1.2
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
φ 3.16±0.1
8.0^{+–00..15}
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
18
V
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
18
V
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
5
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 10 V, I_E = 0
1
µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = 18 V, I_B = 0
10
µA
Forward current transfer ratio
h_FE1 ^* V_CE = 2 V, I_C = 500 mA
90
280

h_FE2 V_CE = 2 V, I_C = 1.5 A
50 100
Collector-emitter saturation voltage
V_CE(sat) I_C = 1 A, I_B = 50 mA
0.5
V
Base-emitter saturation voltage
V_BE(sat) I_C = 500 mA, I_B = 50 mA
1.2
V
Transition frequency
f_T
V_CB = 6 V, I_E = −50 mA, f = 200 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 6 V, I_E = 0, f = 1 MHz
12
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
R
S
h_FE1
90 to 155 130 to 210 180 to 280
Publication date: January 2003
SJD00093BED
1