2SC1567 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Power Transistors
2SC1567, 2SC1567A
Silicon NPN epitaxial planar type
For low-frequency high power driver
Complementary to 2SA0794, 2SA0794A
■ Features
• High collector-emitter voltage (Base open) V_CEO
• Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SC1567 VCBO
100
V
(Emitter open)
2SC1567A
120
Collector-emitter voltage ^{2SC1567 V}CEO
100
V
(Base open)
2SC1567A
120
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
0.5
A
Peak collector current
I_CP
1
A
Collector power dissipation
P_C
1.2
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
φ 3.16±0.1
8.0^{+–00..15}
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-emitter voltage ^{2SC1567 V}CEO ^IC ^{= 100 µA, I}B ^{= 0}
100
(Base open)
2SC1567A
120
Emitter-base voltage (Collector open) V_EBO I_E = 1 µA, I_C = 0
5
Forward current transfer ratio
h_FE1 ^* V_CE = 10 V, I_C = 150 mA
130
h_FE2 V_CE = 5 V, I_C = 500 mA
50
Collector-emitter saturation voltage
V_CE(sat) I_C = 500 mA, I_B = 50 mA
Base-emitter saturation voltage
V_BE(sat) I_C = 500 mA, I_B = 50 mA
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
Typ Max
330
100
0.2 0.4
0.85 1.20
120
11 20
Unit
V
V

V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
R
S
h_FE1
130 to 220 185 to 330
Publication date: February 2003
SJD00092BED
1