2SC1518 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency bias oscillation of tape recorders)

Transistor
2SC1518
Silicon NPN epitaxial planer type
For high-frequency bias oscillation of tape recorders
For DC-DC converter
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Satisfactory operation performances and high efficiency with a
low-voltage power supply.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
25
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
0.45^{+–00..21}
1.27
1.27
123
0.45^{+–00..21}
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_BE(sat)
V_CE(sat)
f_T
C_ob
V_CB = 25V, I_E = 0
100
nA
V_CE = 20V, I_B = 0
1
µA
I_C = 10µA, I_E = 0
25
V
I_C = 1mA, I_B = 0
20
V
I_E = 10µA, I_C = 0
5
V
V_CE = 2V, I_C = 500mA^*2
90
330
V_CE = 2V, I_C = 1A^*2
50
100
I_C = 500mA, I_B = 50mA^*2
1.2
V
I_C = 1A, I_B = 50mA^*2
0.5
V
V_CB = 10V, I_E = –50mA, f = 200MHz
150
MHz
V_CB = 10V, I_E = 0, f = 1MHz
12
20
pF
*2 _{Pulse measurement}
*1_{hFE1 Rank classification}
Rank
Q
R
h_FE1
90 ~ 155 130 ~ 220
S
185 ~ 330
1