2SC1473 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type

Transistor
2SC1473, 2SC1473A
Silicon NPN triple diffusion planer type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
s ^Features
q High collector to emitter voltage V_CEO.
q High transition frequency f_T.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SC1473
250
base voltage 2SC1473A
V_CBO
300
V
Collector to 2SC1473
200
emitter voltage 2SC1473A
V_CEO
300
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
100
mA
Collector current
I_C
70
mA
Collector power dissipation P_C
750
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
current
Collector to emitter
voltage
2SC1473
2SC1473A
2SC1473
2SC1473A
I_CEO
V_CEO
V_CE = 120V, I_B = 0
V_CE = 120V, I_B = 0
I_C = 100µA, I_C = 0
1
µA
1
200
V
300
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE*
V_CE(sat)
f_T
C_ob
I_E = 1µA, I_C = 0
7
V_CE = 10V, I_C = 5mA
30
I_C = 50mA, I_B = 5mA
V_CB = 10V, I_E = –10mA, f = 200MHz
50
V_CB = 10V, I_E = 0, f = 1MHz
V
220
1.2
V
80
MHz
10
pF
*_{hFE Rank classification}
Rank
P
h_FE
30 ~ 100
Q
60 ~ 150
R
100 ~ 220
1