2SC13840Q Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1384
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0684
 Features
 Low collector-emitter saturation voltage V_CE(sat)
/ _{ Complementary pair with 2SA0684}
e _{.  Absolute Maximum Ratings Ta = 25°C}
ge _Parameter
Symbol Rating
Unit
c _{sta Collector-base voltage (Emitter open)}
n ^{d cle Collector-emitter voltage (Base open)}
a ^{e lifecy Emitter-base voltage (Collector open)}
t _{Collector current}
n ^{u duc Peak collector current}
ro _{Collector power dissipation}
te ^{tin ur P Junctiontemperature}
ing ^fo type ^{tion. Storage temperature}
V_CBO
60
V
V_CEO
50
V
V_EBO
5
V
I_C
1
A
I_CP
1.5
A
P_C
1
W
T_j
150
°C
T_stg –55 to +150 °C
 Package
 Code
TO-92L-A1
 Pin Name
1. Emitter
2. Collector
3. Base
in ⁿ_es ^{follotewnanceetyped typed} t ^{inform/ean/  Electrical Characteristics Ta = 25°C±3°C}
a ^{o lud ain nc ue pe tes .jp Parameter}
Symbol
Conditions
Min Typ Max Unit
inc ^{m na tin ty la .co Collector-base voltage (Emitter open)}
V_CBO I_C = 10 mA, I_E = 0
60
c _{ed ned inte on ed} ut nic _{Collector-emitter voltage (Base open)}
V_CEO I_C = 2 mA, I_B = 0
50
M is ^{tinu pla ma disc tinu abo aso Emitter-base voltage (Collector open)}
V_EBO I_E = 10 mA, I_C = 0
5
on ^{ed con RL an Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0}
/Disc ^{plan dis ing U icon.p Forward current transfer ratio *1}
h_FE1 ^*2 V_CE = 10 V, I_C = 500 mA
85
h_FE2 V_CE = 5 V, I_C = 1 A
50
D_{ance follow .sem Collector-emitter saturation voltage}
V_CE(sat) I_C = 500 mA, I_B = 50 mA
n _it ^{w Base-emitter saturation voltage}
V_BE(sat) I_C = 500 mA, I_B = 50 mA
ainte e ^{vis ://ww Transition frequency}
f_T V_CB = 10 V, I_E = –50 mA, f = 200 MHz
M _as ttp ^{Collector output capacitance}
Ple ^{h (Common base, input open circuited)}
C_re V_CB = 10 V, I_E = 0, f = 1 MHz
0.1
340
0.2 0.4
0.85 1.20
200
11
20
V
V
V
mA

V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h_FE1
85 to 170
120 to 240
170 to 340
Publication date : October 2008
SJC00421AED
1