2SC1383 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

Transistor
2SC1383, 2SC1384
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA683 and 2SA684
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Complementary pair with 2SA683 and 2SA684.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SC1383
30
base voltage 2SC1384
V_CBO
60
V
Collector to 2SC1383
25
V_CEO
V
emitter voltage 2SC1384
50
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base 2SC1383
voltage
2SC1384
I_CBO
V_CBO
V_CB = 20V, I_E = 0
I_C = 10µA, I_E = 0
0.1
µA
30
V
60
Collector to emitter 2SC1383
25
V_CEO
I_C = 2mA, I_B = 0
V
voltage
2SC1384
50
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
I_E = 10µA, I_C = 0
5
V
V_CE = 10V, I_C = 500mA^*2
85
160 340
V_CE = 5V, I_B = 1A^*2
50
100
I_C = 500mA, I_B = 50mA^*2
0.2
0.4
V
I_C = 500mA, I_B = 50mA^*2
0.85
1.2
V
V_CB = 10V, I_E = –50mA, f = 200MHz
200
MHz
V_CB = 10V, I_E = 0, f = 1MHz
11
20
pF
*2 _{Pulse measurement}
*1_{hFE1 Rank classification}
Rank
Q
R
h_FE1
85 ~ 170 120 ~ 240
S
170 ~ 340
1