2SC1360 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For intermadiate frequency amplification of TV image)

Transistor
2SC1360, 2SC1360A
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
s ^Features
q High transition frequency f_T.
q Large collector power dissipation P_C.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SC1360
50
base voltage 2SC1360A
V_CBO
60
V
Collector to 2SC1360
45
V_CEO
V
emitter voltage 2SC1360A
60
Emitter to base voltage
V_EBO
4
V
Collector current
I_C
50
mA
Collector power dissipation P_C
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45–0.1
1.27
1.27
123
+0.2
0.45–0.1
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base 2SC1360
voltage
2SC1360A
I_CBO
V_CBO
V_CB = 20V, I_E = 0
I_C = 100µA, I_E = 0
100
nA
50
V
60
Collector to emitter 2SC1360
45
V_CEO
I_C = 1mA, I_B = 0
V
voltage
2SC1360A
60
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
V_EBO
h_FE
V_CE(sat)
f_T
C_re
PG
I_E = 100µA, I_C = 0
4
V_CB = 10V, I_E = –10mA
20
I_C = 20mA, I_B = 2mA
V_CB = 10V, I_E = –10mA, f = 100MHz
300
V_CE = 10V, I_C = 1mA, f = 10.7MHz
V_CB = 10V, I_E = –10mA, f = 58MHz
22
V
100
0.4
V
MHz
1.5
pF
30
dB
1