2SC1318A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency driver amplification)

Transistor
2SC1318A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA720A
s ^Features
q High collector to emitter voltage V_CEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
80
V
Collector to emitter voltage V_CEO
70
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1
A
Collector current
I_C
0.5
A
Collector power dissipation P_C
750
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
V_CBO
V_CB = 20V, I_E = 0
I_C = 10µA, I_E = 0
0.1
µA
80
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
I_C = 2mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 10V, I_C = 150mA^*2
V_CE = 10V, I_C = 500mA^*2
I_C = 300mA, I_B = 30mA^*2
I_C = 300mA, I_B = 30mA^*2
70
V
5
V
85
160 340
40
100
0.2
0.6
V
0.85
1.5
V
Transition frequency
f_T
V_CB = 10V, I_E = –50mA, f = 200MHz
120
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
11
20
pF
*2 _{Pulse measurement}
*1_{hFE1 Rank classification}
Rank
Q
R
h_FE1
85 ~ 170 120 ~ 240
S
170 ~ 340
1