2SC1317 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
I Features
• Low collector to emitter saturation voltage V_CE(sat)
• Complementary pair with 2SA719 and 2SA720
5.0±0.2
0.7±0.1
Unit: mm
4.0±0.2
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to
2SC1317
V_CBO
30
V
base voltage
2SC1318
60
Collector to
2SC1317
V_CEO
25
V
emitter voltage 2SC1318
50
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_EBO
7
V
I_CP
1
A
I_C
500
mA
P_C
625
mW
T_j
150
°C
T_stg
−55 to +150
°C
0.45^{+–00..115}
(1.27)
(1.27)
0.45^{+–00..115}
123
2.54±0.15
1: Emitter
2: Collector
3: Base
TO-92 Package
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
I_CBO
V_CB = 20 V, I_E = 0
Collector to
2SC1317
V_CBO
I_C = 10 µA, I_E = 0
30
base voltage
2SC1318
60
Collector to
2SC1317
V_CEO
I_C = 10 mA, I_B = 0
25
emitter voltage
2SC1318
50
Emitter to base voltage
Forward current transfer ratio ^*1
Collector to emitter saturation voltage ^*1
Base to emitter saturation voltage ^*1
Transition frequency
Collector output capacitance
V_EBO
I_E = 10 µA, I_C = 0
7
h_FE1 ^*2 V_CE = 10 V, I_C = 150 mA
85
h_FE2
V_CE = 10 V, I_C = 500 mA
40
V_CE(sat) I_C = 300 mA, I_B = 30 mA
V_BE(sat) I_C = 300 mA, I_B = 30 mA
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h_FE1
85 to 170 120 to 240 170 to 340
Typ Max
0.1
340
0.35 0.6
1.1 1.5
200
6
15
Unit
µA
V
V
V
V
V
MHz
pF
1