2SC1215 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
s ^Features
q High transition frequency f_T.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
50
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector to base voltage
V_CBO
I_C =100µA, I_E = 0
30
V
Emitter to base voltage
V_EBO
I_E = 10µA, I_C = 0
3
V
Forward current transfer ratio
h_FE
V_CB = 10V, I_E = –2mA
25
Base to emitter voltage
V_BE
V_CB = 10V, I_E = –2mA
0.72
V
Collector to emitter saturation voltage
Common emitter reverse transfer capacitance
Transition frequency
V_CE(sat)
C_re
f_T*
I_C = 10mA, I_B = 1mA
0.1
V
V_CE = 10V, I_C = 1mA, f = 10.7MHz
1
1.5
pF
V_CB = 10V, I_E = –15mA, f = 100MHz 600 1200 1600 MHz
Power gain
Base time constant
PG
r_bb' · C_C
V_CB = 10V, I_E = –1mA, f = 100MHz
V_CB = 10V, I_E = –10mA, f = 450kHz
20
dB
25
ps
*_{fT Rank classification}
Rank
T
S
f_T(MHz) 600 ~ 1300 900 ~ 1600
1