2SC1047 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

Transistor
2SC1047
Silicon NPN epitaxial planer type
For high-frequency amplification
s ^Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency f_T.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
30
V
Collector to emitter voltage V_CEO
20
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
20
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Power gain
Noise figure
Symbol
V_CBO
V_EBO
h_FE*
V_BE
C_re
f_T
PG
NF
Conditions
I_C = 10µA, I_E = 0
I_E = 10µA, I_C = 0
V_CB = 6V, I_E = –1mA
V_CB = 6V, I_E = –1mA
V_CE = 6V, I_C = 1mA, f = 10.7MHz
V_CB = 6V, I_E = –1mA, f = 200MHz
V_CB = 6V, I_E = –1mA, f = 100MHz
V_CB = 6V, I_E = –1mA, f = 100MHz
min
typ
max Unit
30
V
3
V
40
260
0.72
V
0.8
1
pF
450 650
MHz
20
dB
3.3
5
dB
*_{hFE Rank classification}
Rank
B
h_FE
40 ~ 110
C
65 ~ 160
D
100 ~ 260
1