2SC0829 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification, oscillation, mixing, and IF stage
of FM/AM radios
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
30
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
30
mA
Collector power dissipation
P_C
400
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45^{+–00..115}
2.5^{+–00..26}
2.5^{+–00..26}
0.45^{+–00..115}
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
30
V
Collector-emitter voltage (Base open) V_CEO I_C = 2 mA, I_B = 0
20
V
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
5
V
Forward current transfer ratio ^*
h_FE V_CE = 10 V, I_C = 1 mA
70
250

Transition frequency
f_T
V_CB = 10 V, I_E = −1 mA, f = 200 MHz 150 230
MHz
Reverse transfer capacitance
(Common emitter)
C_re V_CB = 10 V, I_E = −1 mA, f = 10.7 MHz
1.3 1.6
pF
Reverse transfer impedance
Z_rb V_CB = 10 V, I_E = −1 mA, f = 2 MHz
60
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
h_FE
70 to 160 110 to 250
Publication date: March 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00098CED
1