2SB970 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-voltage output amplification)

Transistor
2SB970
Silicon PNP epitaxial planer type
For low-voltage output amplification
Unit: mm
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–15
V
Collector to emitter voltage V_CEO
–10
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 1R
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
V_CB = –10V, I_E = 0
I_C = –10µA, I_E = 0
I_C = –1mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –2V, I_C = –0.5A^*2
V_CE = –2V, I_C = –1A^*2
I_C = –0.4A, I_B = –8mA
I_C = –0.4A, I_B = –8mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
*1_{hFE1 Rank classification}
Rank
R
h_FE1
Marking Symbol
130 ~ 220
1RR
S
180 ~ 350
1RS
min
typ
max Unit
–100 nA
–15
V
–10
V
–7
V
130
350
60
– 0.16 – 0.3
V
– 0.8 –1.2
V
130
MHz
22
pF
*2 _{Pulse measurement}
1