2SB968 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-frequency output amplification)

Power Transistors
2SB968
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
s ^Features
q Possible to solder the radiation fin directly to printed cicuit board
q High collector to emitter V_CEO
q Large collector power dissipation P_C
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–50
V
Collector to emitter voltage V_CEO
–40
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–3
A
Collector current
I_C
–1.5
A
Collector power dissipation (T_C=25°C)
P_C
20
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
I_EBO
V_CBO
V_CEO
h_FE*
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB = –20V, I_E = 0
V_CE = –10V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –1mA, I_E = 0
I_C = –2mA, I_B = 0
V_CE = –5V, I_C = –1A
I_C = –1.5A, I_B = – 0.15A
I_C = –2A, I_B = – 0.2A
V_CB = –5V, I_E = 0.5A, f = 200MHz
V_CB = –20V, I_E = 0, f = 1MHz
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
1
2
3
6.5±0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
0.75
2.3 2.3
0.6
123
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
min
typ
max Unit
–1
µA
–100 µA
–10
µA
–50
V
–40
V
50
220
–1
V
–1.5
V
150
MHz
45
pF
*_{hFE Rank classification}
Rank
P
h_FE
50 to 100
Q
80 to 160
R
120 to 220
1