2SB967 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-frequency power amplification)

Power Transistors
2SB967
Silicon PNP epitaxial planar type
For low-frequency power amplification
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
s ^Features
q Possible to solder the radiation fin directly to printed cicuit board
q Low collector to emitter saturation voltage V_CE(sat)
q Large collector current I_C
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–27
V
Collector to emitter voltage V_CEO
–18
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–8
A
Collector current
I_C
–5
A
Collector power dissipation (T_C=25°C)
P_C
20
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
1
2
3
6.5±0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
0.75
2.3 2.3
0.6
123
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
f_T
C_ob
V_CB = –10V, I_E = 0
V_EB = –5V, I_C = 0
I_C = –1mA, I_B = 0
–18
I_E = –10µA, I_C = 0
–7
V_CE = –2V, I_C = –2A
90
I_C = –3A, I_B = – 0.1A
V_CB = –6V, I_E = 50mA, f = 200MHz
V_CB = –20V, I_E = 0, f = 1MHz
–100 nA
–1
µA
V
V
625
–1
V
120
MHz
85
pF
*_{hFE Rank classification}
Rank
P
h_FE
90 to 135
Q
125 to 205
R
180 to 625
1