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2SB956 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification) | |||
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Transistor
2SB956
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1280
Unit: mm
s Features
q Large collector power dissipation PC.
q Low collector to emitter saturation voltage VCE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â20
V
Collector to emitter voltage VCEO
â20
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â2
A
Collector current
IC
â1
A
Collector power dissipation PC*
1
W
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SCâ62
Mini Power Type Package
Marking symbol : H
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = â10V, IE = 0
IC = â1mA, IB = 0
â20
IE = â10µA, IC = 0
â5
VCE = â2V, IC = â500mA*2
130
VCE = â2V, IC = â1.5A*2
50
IC = â1A, IB = â50mA*2
IC = â500mA, IB = â50mA
VCB = â6V, IE = 50mA, f = 200MHz
VCB = â6V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
R
hFE1
Marking Symbol
130 ~ 210
HR
S
180 ~ 280
HS
typ max Unit
â1
µA
V
V
280
â 0.5
V
â1.2
V
200
MHz
40
pF
*2 Pulse measurement
1
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