2SB954 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification)

Power Transistors
2SB954, 2SB954A
Silicon PNP epitaxial planar type
For power amplification
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Low collector to emitter saturation voltage V_CE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB954
–60
V_CBO
V
base voltage 2SB954A
–80
Collector to 2SB954
–60
V_CEO
V
emitter voltage 2SB954A
–80
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–2
A
Collector current
I_C
–1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
30
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB954
current
2SB954A
Collector cutoff
2SB954
current
2SB954A
Emitter cutoff current
Collector to emitter 2SB954
voltage
2SB954A
I_CEO
I_CES
I_EBO
V_CEO
V_CE = –30V, I_B = 0
V_CE = –60V, I_B = 0
V_CE = –60V, V_BE = 0
V_CE = –80V, V_BE = 0
V_EB = –5V, I_C = 0
I_C = –30mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1*
h_FE2
V_CE(sat)
V_BE
f_T
t_on
t_stg
t_f
V_CE = –4V, I_C = – 0.2A
V_CE = –4V, I_C = –1A
I_C = –1A, I_B = – 0.125A
V_CE = –4V, I_C = –1A
V_CE = –5V, I_C = – 0.2A, f = 10MHz
I_C = –1A, I_B1 = – 0.1A, I_B2 = 0.1A,
V_CC = –50V
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
–300
µA
–300
–200
µA
–200
–1
mA
–60
V
–80
70
250
15
–1
V
–1.3
V
30
MHz
0.5
µs
1.2
µs
0.3
µs
1