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2SB952 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-voltage switching) | |||
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Power Transistors
2SB952, 2SB952A
Silicon PNP epitaxial planar type
For low-voltage switching
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q Low collector to emitter saturation voltage VCE(sat)
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to 2SB952
â40
base voltage 2SB952A
VCBO
â50
V
Collector to 2SB952
â20
emitter voltage 2SB952A
VCEO
â40
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â12
A
Collector current
IC
â7
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
30
W
1.3
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
Collector cutoff
2SB952
current
2SB952A
Emitter cutoff current
Collector to emitter 2SB952
voltage
2SB952A
ICBO
IEBO
VCEO
VCB = â40V, IE = 0
VCB = â50V, IE = 0
VEB = â5V, IC = 0
IC = â10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCE = â2V, IC = â 0.1A
VCE = â2V, IC = â2A
IC = â5A, IB = â 0.16A
IC = â5A, IB = â 0.16A
VCE = â10V, IC = â 0.5A, f = 10MHz
VCB = â10V, IE = 0, f = 1MHz
IC = â2A, IB1 = â66mA, IB2 = 66mA
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
â50
µA
â50
â50
µA
â20
V
â40
45
90
260
â 0.6
V
â1.5
V
150
MHz
140
pF
0.1
µs
0.5
µs
0.1
µs
*hFE2 Rank classification
Rank
Q
P
hFE2
90 to 180 130 to 260
1
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