2SB951 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For midium-speed switching)

Power Transistors
2SB951, 2SB951A
Silicon PNP epitaxial planar type Darlington
For midium-speed switching
Complementary to 2SD1277 and 2SD1277A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB951
–60
V_CBO
V
base voltage 2SB951A
–80
Collector to 2SB951
–60
V_CEO
V
emitter voltage 2SB951A
–80
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–12
A
Collector current
I_C
–8
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
45
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB951
current
2SB951A
Emitter cutoff current
Collector to emitter 2SB951
voltage
2SB951A
I_CBO
I_EBO
V_CEO
V_CB = –60V, I_E = 0
V_CB = –80V, I_E = 0
V_EB = –7V, I_C = 0
I_C = –30mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CE = –3V, I_C = –4A
V_CE = –3V, I_C = –8A
I_C = –4A, I_B = –8mA
I_C = –4A, I_B = –8mA
V_CE = –10V, I_C = –1A, f = 1MHz
I_C = –4A, I_B1 = –8mA, I_B2 = 8mA,
V_CC = –50V
min
–60
–80
2000
500
typ max Unit
–100
µA
–100
–2
mA
V
10000
–1.5
V
–2
V
20
MHz
0.5
µs
2
µs
1
µs
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1 2000 to 5000 4000 to 10000
1