2SB950 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

Power Transistors
2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
s ^Features
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
q High foward current transfer ratio h_FE
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB950
–60
V_CBO
V
base voltage 2SB950A
–80
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
Collector to 2SB950
–60
emitter voltage 2SB950A
V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–8
A
Collector current
I_C
–4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SB950
current
2SB950A
Collector cutoff
2SB950
current
2SB950A
Emitter cutoff current
Collector to emitter 2SB950
voltage
2SB950A
I_CBO
I_CEO
I_EBO
V_CEO
V_CB = –60V, I_E = 0
V_CB = –80V, I_E = 0
V_CE = –30V, I_B = 0
V_CE = –40V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –30mA, I_B = 0
–200
µA
–200
–500
µA
–500
–2
mA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1
h_FE2*
V_BE
V_CE(sat)1
V_CE(sat)2
f_T
t_on
t_stg
t_f
V_CE = –3V, I_C = – 0.5A
V_CE = –3V, I_C = –3A
V_CE = –3V, I_C = –3A
I_C = –3A, I_B = –12mA
I_C = –5A, I_B = –20mA
V_CE = –10V, I_C = – 0.5A, f = 1MHz
1000
2000
I_C = –3A, I_B1 = –12mA, I_B2 = 12mA,
V_CC = –50V
10000
–2.5
V
–2
V
–4
V
20
MHz
0.3
µs
2
µs
0.5
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2 2000 to 5000 4000 to 10000
1