2SB943 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power switching)

Power Transistors
2SB943
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1268
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q Satisfactory linearity of foward current transfer ratio h_FE
q Large collector current I_C
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–130
V
Collector to emitter voltage V_CEO
–80
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–6
A
Collector current
I_C
–3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
30
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
V_CB = –100V, I_E = 0
I_EBO
V_EB = –5V, I_C = 0
–10
µA
–50
µA
Collector to emitter voltage
V_CEO
I_C = –10mA, I_B = 0
–80
V
Forward current transfer ratio
h_FE1
h_FE2*
V_CE = –2V, I_C = – 0.1A
V_CE = –2V, I_C = – 0.5A
45
90
260
Collector to emitter saturation voltage V_CE(sat)
I_C = –2A, I_B = – 0.1A
– 0.5
V
Base to emitter saturation voltage V_BE(sat)
I_C = –2A, I_B = – 0.1A
–1.5
V
Transition frequency
f_T
V_CE = –10V, I_C = – 0.5A, f = 10MHz
30
MHz
Turn-on time
Storage time
Fall time
t_on
I_C = – 0.5A,
t_stg
t_f
I_B1 = –50mA, I_B2 = 50mA
0.3
µs
1.1
µs
0.3
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
1