|
2SB942 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-frequency power amplification) | |||
|
Power Transistors
2SB942, 2SB942A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1267 and 2SD1267A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to 2SB942
â60
VCBO
V
base voltage 2SB942A
â80
Collector to 2SB942
â60
emitter voltage 2SB942A
VCEO
â80
V
Emitter to base voltage
VEBO
â5
V
Peak collector current
ICP
â8
A
Collector current
IC
Collector power TC=25°C
dissipation
Ta=25°C
PC
â4
A
40
W
2
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 to +150
ËC
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
Ï3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
â0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TOâ220 Full Pack Package(a)
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SB942
current
2SB942A
Collector cutoff
2SB942
current
2SB942A
Emitter cutoff current
Collector to emitter 2SB942
voltage
2SB942A
ICES
ICEO
IEBO
VCEO
VCE = â60V, VBE = 0
VCE = â80V, VBE = 0
VCE = â30V, IB = 0
VCE = â60V, IB = 0
VEB = â5V, IC = 0
IC = â30mA, IB = 0
â400
µA
â400
â700
µA
â700
â1
mA
â60
V
â80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = â4V, IC = â1A
70
VCE = â4V, IC = â3A
15
VCE = â4V, IC = â3A
IC = â4A, IB = â 0.4A
VCE = â10V, IC = â 0.1A, f = 10MHz
IC = â4A, IB1 = â 0.4A, IB2 = 0.4A
250
â2
V
â1.5
V
30
MHz
0.2
µs
0.5
µs
0.2
µs
*hFE1 Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
1
|
▷ |