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2SB941 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-frequency power amplification)
Power Transistors
2SB941, 2SB941A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1266 and 2SD1266A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB941
–60
VCBO
V
base voltage 2SB941A
–80
Collector to 2SB941
–60
emitter voltage 2SB941A
VCEO
–80
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–5
A
Collector current
IC
Collector power TC=25°C
dissipation
Ta=25°C
PC
–3
A
35
W
2
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SB941
current
2SB941A
Collector cutoff
2SB941
current
2SB941A
Emitter cutoff current
Collector to emitter 2SB941
voltage
2SB941A
ICES
ICEO
IEBO
VCEO
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
–200
µA
–200
–300
µA
–300
–1
mA
–60
V
–80
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = –4V, IC = –1A
70
VCE = –4V, IC = –3A
10
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
250
–1.8
V
–1.2
V
30
MHz
0.5
µs
1.2
µs
0.3
µs
*hFE1 Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
rank classification.
1