2SB940 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification)

Power Transistors
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264 and 2SD1264A
s ^Features
q High collector to emitter voltage V_CEO
q Large collector power dissipation P_C
q Full-pack package which can be installed to the heat sink with
one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB940
–200
V_CBO
V
base voltage 2SB940A
–200
Collector to 2SB940
–150
V_CEO
V
emitter voltage 2SB940A
–180
Emitter to base voltage
V_EBO
–6
V
Peak collector current
I_CP
–3
A
Collector current
I_C
–2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
30
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter 2SB940
voltage
2SB940A
I_CBO
I_EBO
V_CBO
V_CEO
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
V_EBO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
V_CB = –200V, I_E = 0
V_EB = –4V, I_C = 0
I_C = –50µA, I_E = 0
I_C = –5mA, I_B = 0
I_E = –500µA, I_C = 0
V_CE = –10V, I_C = –150mA
V_CE = –10V, I_C = –400mA
V_CE = –10V, I_C = –400mA
I_C = –500mA, I_B = –50mA
V_CE = –10V, I_C = – 0.5A, f = 10MHz
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max Unit
–50
µA
–50
µA
–200
V
–150
V
–180
–6
V
60
240
50
–1
V
–1
V
30
MHz
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
60 to 140 100 to 240
1