2SB939 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington

Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching
Complementary to 2SD1262 and 2SD1262A
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB939
–60
base voltage 2SB939A
V_CBO
–80
V
Collector to 2SB939
–60
V_CEO
V
emitter voltage 2SB939A
–80
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–12
A
Collector current
I_C
–8
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
45
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB939
current
2SB939A
Emitter cutoff current
Collector to emitter 2SB939
voltage
2SB939A
I_CBO
I_EBO
V_CEO
V_CB = –60V, I_E = 0
V_CB = –80V, I_E = 0
V_EB = –7V, I_C = 0
I_C = –30mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CE = –3V, I_C = –4A
V_CE = –3V, I_C = –8A
I_C = –4A, I_B = –8mA
I_C = –4A, I_B = –8mA
V_CE = –10V, I_C = – 0.5A, f = 1MHz
I_C = –4A, I_B1 = –8mA, I_B2 = 8mA,
V_CC = –50V
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1 2000 to 5000 4000 to 10000
Internal Connection
B
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
–60
–80
2000
500
15
0.5
2
1
C
max Unit
–100
µA
–100
–2
mA
V
10000
–1.5
V
–2
V
MHz
µs
µs
µs
E
1