2SB938 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

Power Transistors
2SB938, 2SB938A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1261 and 2SD1261A
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB938
–60
V_CBO
V
base voltage 2SB938A
–80
Collector to 2SB938
–60
emitter voltage 2SB938A
V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
Peak collector current
I_CP
–8
Collector current
I_C
–4
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
1.3
Junction temperature
Storage temperature
T_j
150
T_stg
–55 to +150
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
V
A
A
W
˚C
˚C
Conditions
Collector cutoff
2SB938
current
2SB938A
Collector cutoff
2SB938
current
2SB938A
Emitter cutoff current
Collector to emitter 2SB938
voltage
2SB938A
Forward current transfer ratio
Base to emitter voltage
I_CBO
I_CEO
I_EBO
V_CEO
h_FE1
h_FE2*
V_BE
Collector to emitter saturation voltage V_CE(sat)
Transition frequency
f_T
Turn-on time
t_on
Storage time
t_stg
Fall time
t_f
V_CB = –60V, I_E = 0
V_CB = –80V, I_E = 0
V_CE = –30V, I_B = 0
V_CE = –40V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –30mA, I_B = 0
V_CE = –3V, I_C = – 0.5A
V_CE = –3V, I_C = –3A
V_CE = –3V, I_C = –3A
I_C = –3A, I_B = –12mA
I_C = –5A, I_B = –20mA
V_CE = –10V, I_C = – 0.5A, f = 1MHz
I_C = –3A, I_B1 = –12mA, I_B2 = 12mA
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2 2000 to 5000 4000 to 10000
Internal Connection
B
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
–60
–80
1000
2000
15
0.3
2
0.5
C
max Unit
–200
µA
–200
–500
µA
–500
–2
mA
V
10000
–2.5
–2
–4
V
V
MHz
µs
µs
µs
E
1