2SB935 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-voltage switching)

Power Transistors
2SB935, 2SB935A
Silicon PNP epitaxial planar type
For low-voltage switching
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s ^Features
q Low collector to emitter saturation voltage V_CE(sat)
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB935
–40
V_CBO
V
base voltage 2SB935A
–50
Collector to 2SB935
–20
emitter voltage 2SB935A
V_CEO
–40
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–15
A
Collector current
I_C
–10
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
35
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB935
current
2SB935A
Emitter cutoff current
Collector to emitter 2SB935
voltage
2SB935A
I_CBO
I_EBO
V_CEO
V_CB = –40V, I_E = 0
V_CB = –50V, I_E = 0
V_EB = –5V, I_C = 0
I_C = –10mA, I_B = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
h_FE1
h_FE2*
V_CE(sat)
V_BE(sat)
f_T
C_ob
t_on
t_stg
t_f
V_CE = –2V, I_C = – 0.1A
V_CE = –2V, I_C = –2A
I_C = –7A, I_B = – 0.23A
I_C = –7A, I_B = – 0.23A
V_CE = –10V, I_C = – 0.5A, f = 10MHz
V_CB = –10V, I_E = 0, f = 1MHz
I_C = –2A, I_B1 = –66mA, I_B2 = 66mA
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
–50
µA
–50
–50
µA
–20
V
–40
45
90
260
– 0.6
V
–1.5
V
150
MHz
200
pF
0.1
µs
0.5
µs
0.1
µs
*_{hFE2 Rank classification}
Rank
Q
P
h_FE2
90 to 180 130 to 260
1