2SB930 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification)

Power Transistors
2SB930, 2SB930A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1253 and 2SD1253A
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Low collector to emitter saturation voltage V_CE(sat)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB930
–60
V_CBO
V
base voltage 2SB930A
–80
Collector to 2SB930
–60
emitter voltage 2SB930A
V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–8
A
Collector current
I_C
–4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB930
current
2SB930A
Collector cutoff
2SB930
current
2SB930A
Emitter cutoff current
Collector to emitter 2SB930
voltage
2SB930A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CES
I_CEO
I_EBO
V_CEO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CE = –60V, V_BE = 0
V_CE = –80V, V_BE = 0
V_CE = –30V, I_B = 0
V_CE = –60V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –30mA, I_B = 0
V_CE = –4V, I_C = –1A
V_CE = –4V, I_C = –3A
V_CE = –4V, I_C = –3A
I_C = –4A, I_B = – 0.4A
V_CE = –10V, I_C = – 0.1A, f = 1MHz
I_C = –4A, I_B1 = – 0.4A, I_B2 = 0.4A
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
70 to 150 120 to 250
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
–400
µA
–400
–700
µA
–700
–1
mA
–60
V
–80
70
250
15
–2
V
–1.5
V
20
MHz
0.2
µs
0.5
µs
0.2
µs
1