2SB929 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification)

Power Transistors
2SB929, 2SB929A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1252 and 2SD1252A
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Low collector to emitter saturation voltage V_CE(sat)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB929
–60
V_CBO
V
base voltage 2SB929A
–80
Collector to 2SB929
–60
emitter voltage 2SB929A
V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–5
A
Collector current
I_C
–3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
35
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB929
current
2SB929A
Collector cutoff
2SB929
current
2SB929A
Emitter cutoff current
Collector to emitter 2SB929
voltage
2SB929A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CES
I_CEO
I_EBO
V_CEO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CE = –60V, V_BE = 0
V_CE = –80V, V_BE = 0
V_CE = –30V, I_B = 0
V_CE = –60V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –30mA, I_B = 0
V_CE = –4V, I_C = –1A
V_CE = –4V, I_C = –3A
V_CE = –4V, I_C = –3A
I_C = –3A, I_B = – 0.375A
V_CE = –10V, I_C = – 0.5A, f = 10MHz
I_C = –1A, I_B1 = – 0.1A, I_B2 = 0.1A
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
–200
µA
–200
–300
µA
–300
–1
mA
–60
V
–80
70
250
10
–1.8
V
–1.2
V
30
MHz
0.5
µs
1.2
µs
0.3
µs
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
70 to 150 120 to 250
Note: Ordering can be made by the common rank (PQ rank h_FE1 = 70 to 250) in the
rank classification.
1