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2SB928 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification) | |||
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Power Transistors
2SB928, 2SB928A
Silicon PNP epitaxial planar type
For power amplification
For TV vartical deflection output
Complementary to 2SD1250 and 2SD1250A
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q High collector to emitter VCEO
q High collector power dissipation PC
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â200
V
Collector to 2SB928
â150
VCEO
V
emitter voltage 2SB928A
â180
Emitter to base voltage
VEBO
â6
V
Peak collector current
ICP
â3
A
Collector current
IC
â2
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
30
W
1.3
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter 2SB928
voltage
2SB928A
ICBO
IEBO
VCBO
VCEO
VCB = â200V, IE = 0
VEB = â4V, IC = 0
IC = â500µA, IE = 0
IC = â5mA, IB = 0
â200
â150
â180
â50
µA
â50
µA
V
V
Emitter to base voltage
VEBO
IE = â500µA, IC = 0
â6
Forward current transfer ratio
hFE1*
VCE = â10V, IC = â150mA
60
hFE2
VCE = â10V, IC = â400mA
50
Base to emitter voltage
VBE
VCE = â10V, IC = â400mA
V
240
â1
V
Collector to emitter saturation voltage VCE(sat)
IC = â500mA, IB = â50mA
â1
V
Transition frequency
fT
VCE = â10V, IC = â 0.5A, f = 10MHz
30
MHz
*hFE1 Rank classification
Rank
Q
P
hFE1
60 to 140 100 to 240
Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification.
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