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2SB928 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power amplification)
Power Transistors
2SB928, 2SB928A
Silicon PNP epitaxial planar type
For power amplification
For TV vartical deflection output
Complementary to 2SD1250 and 2SD1250A
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q High collector to emitter VCEO
q High collector power dissipation PC
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–200
V
Collector to 2SB928
–150
VCEO
V
emitter voltage 2SB928A
–180
Emitter to base voltage
VEBO
–6
V
Peak collector current
ICP
–3
A
Collector current
IC
–2
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
30
W
1.3
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter 2SB928
voltage
2SB928A
ICBO
IEBO
VCBO
VCEO
VCB = –200V, IE = 0
VEB = –4V, IC = 0
IC = –500µA, IE = 0
IC = –5mA, IB = 0
–200
–150
–180
–50
µA
–50
µA
V
V
Emitter to base voltage
VEBO
IE = –500µA, IC = 0
–6
Forward current transfer ratio
hFE1*
VCE = –10V, IC = –150mA
60
hFE2
VCE = –10V, IC = –400mA
50
Base to emitter voltage
VBE
VCE = –10V, IC = –400mA
V
240
–1
V
Collector to emitter saturation voltage VCE(sat)
IC = –500mA, IB = –50mA
–1
V
Transition frequency
fT
VCE = –10V, IC = – 0.5A, f = 10MHz
30
MHz
*hFE1 Rank classification
Rank
Q
P
hFE1
60 to 140 100 to 240
Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification.
1