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2SB873 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification) | |||
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Transistor
2SB873
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
For stroboscope
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector current IC.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â30
V
Collector to emitter voltage VCEO
â20
V
Emitter to base voltage
VEBO
â7
V
Peak collector current
ICP
â10
A
Collector current
IC
â5
A
Collector power dissipation PC
1
W
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
+0.2
0.45â0.1
1.27
1.27
123
+0.2
0.45â0.1
1:Emitter
2:Collector
3:Base
EIAJ:SCâ51
TOâ92L Package
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCEO
VEBO
hFE*1
VCE(sat)
fT
Cob
VCB = â10V, IE = 0
VEB = â5V, IC = 0
IC = â1mA, IB = 0
â20
IE = â10µA, IC = 0
â7
VCE = â2V, IC = â2A*2
90
IC = â3A, IB = â0.1A*2
VCB = â6V, IE = 50mA, f = 200MHz
VCB = â20V, IE = 0, f = 1MHz
typ max Unit
â100 nA
â100 nA
V
V
625
â1
V
120
MHz
85
pF
*2 Pulse measurement
*1hFE Rank classification
Rank
P
Q
hFE
90 ~ 135 120 ~ 205
R
180 ~ 625
1
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