2SB819 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

Transistor
2SB819
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1051
s ^Features
q High collector to emitter voltage V_CEO.
q Large collector power dissipation P_C.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–50
V
Collector to emitter voltage V_CEO
–40
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–3
A
Collector current
I_C
–1.5
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_CEO
I_EBO
V_CBO
V_CEO
h_FE*1
V_CE(sat)
V_BE(sat)
f_T
C_ob
Conditions
V_CB = –20V, I_E = 0
V_CE = –10V, I_B = 0
V_EB = –5V, I_C = 0
I_C = –1mA, I_E = 0
I_C = –2mA, I_B = 0
V_CE = –5V, I_C = –1A^*2
I_C = –1.5A, I_B = –0.15A^*2
I_C = –2A, I_B = –0.2A^*2
V_CB = –5V, I_E = 0.5A, f = 200MHz
V_CB = –20V, I_E = 0, f = 1MHz
*1_{hFE Rank classification}
Rank
Q
R
h_FE
80 ~ 160 120 ~ 220
min
typ
max Unit
–1
µA
–100 µA
–10
µA
–50
V
–40
V
80
220
–1
V
–1.5
V
150
MHz
45
pF
*2 _{Pulse measurement}
1