2SB789 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency driver amplification)

Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SD968 and 2SD968A
Unit: mm
s ^Features
q High collector to emitter voltage V_CEO.
q Large collector power dissipation P_C.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SB789
–100
base voltage 2SB789A
V_CBO
–120
V
Collector to 2SB789
–100
V_CEO
V
emitter voltage 2SB789A
–120
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–1
A
Collector current
I_C
–0.5
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : D^(2SB789)
E^(2SB789A)
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector to emitter 2SB789
voltage
2SB789A
V_CEO
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*
h_FE2
V_CE(sat)
V_BE(sat)
f_T
Cob
Conditions
I_C = –100µA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –150mA
V_CE = –5V, I_C = –500mA
I_C = –500mA, I_B = –50mA
I_C = –500mA, I_B = –50mA
V_CB = –10V, I_E = 50mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
min
–100
–120
–5
90
50
typ
– 0.2
– 0.85
120
max
220
– 0.6
–1.2
30
Unit
V
V
V
V
MHz
pF
*_{hFE1 Rank classification}
Rank
h_FE1
Marking ^2SB789
Symbol
2SB789A
Q
90 ~ 155
DQ
EQ
R
130 ~ 220
DR
ER
1