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2SB788 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) | |||
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Transistor
2SB788
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD958
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â120
V
Collector to emitter voltage VCEO
â120
V
Emitter to base voltage
VEBO
â7
V
Peak collector current
ICP
â50
mA
Collector current
IC
â20
mA
Collector power dissipation PC
400
mW
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SCâ71
M Type Mold Package
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Noise voltage
NV
VCB = â50V, IE = 0
â100 nA
VCE = â50V, IB = 0
â1
µA
IC = â10µA, IE = 0
â120
V
IC = â1mA, IB = 0
â120
V
IE = â10µA, IC = 0
â7
V
VCE = â5V, IC = â2mA
180
700
IC = â20mA, IB = â2mA
â 0.6
V
VCB = â5V, IE = 2mA, f = 200MHz
150
MHz
VCE = 40V, IC = â1mA, GV = 80dB,
Rg = 100kâ¦, Function = FLAT
150
mV
*hFE Rank classification
Rank
R
hFE
180 ~ 360
S
260 ~ 520
T
360 ~ 700
1
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