2SB779 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

Transistor
2SB779
Silicon PNP epitaxial planer type
For low-frequency output amplification
Unit: mm
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q Satisfactory linearity of h_FE at the low collector voltage.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–25
V
Collector to emitter voltage V_CEO
–20
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 1A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB = –25V, I_E = 0
–100 nA
V_CE = –20V, I_B = 0
–1
µA
I_C = –10µA, I_E = 0
–25
V
I_C = –1mA, I_B = 0
–20
V
I_E = –10µA, I_C = 0
–7
V
V_CE = –2V, I_C = –0.5A^*2
90
220
V_CE = –2V, I_C = –1A^*2
25
I_C = –500mA, I_B = –50mA^*2
– 0.2 – 0.4
V
I_C = –500mA, I_B = –50mA^*2
–1.2
V
V_CB = –10V, I_E = 50mA, f = 200MHz
150
MHz
V_CB = –10V, I_E = 0, f = 1MHz
15
pF
*2 _{Pulse measurement}
*_{hFE1 Rank classification}
Rank
Q
R
h_FE1
Marking Symbol
90 ~ 155
1AQ
130 ~ 220
1AR
1