2SB774 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

Transistor
2SB774
Silicon PNP epitaxial planer type
For low-frequency amplification
s ^Features
q High emitter to base voltage V_EBO.
q Protective diodes and resistances between emitter and base can
be omitted.
5.0±0.2
Unit: mm
4.0±0.2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–30
V
Collector to emitter voltage V_CEO
–25
V
Emitter to base voltage
V_EBO
–15
V
Peak collector current
I_CP
–200
mA
Collector current
I_C
–100
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE1*
h_FE2
V_CB = –10V, I_E = 0
V_CE = –20V, I_B = 0
I_C = –10µA, I_E = 0
I_C = –2mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –2mA
V_CE = –2V, I_C = –100mA
–1
µA
–100 µA
–30
V
–25
V
–15
V
210
460
90
Collector to emitter saturation voltage V_CE(sat)
I_C = –100mA, I_B = –10mA
–0.5
V
Transition frequency
f_T
V_CB = –10V, I_E = 2mA, f = 200MHz
150
MHz
Collector output capacitance
C_ob
V_CB = –10V, I_E = 0, f = 1MHz
4
pF
*_{hFE1 Rank classification}
Rank
R
S
h_FE1
210 ~ 340 290 ~ 460
1