2SB745 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SD661 and 2SD661A
s ^Features
q Low noise voltage NV.
q High foward current transfer ratio h_FE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SB745
–35
base voltage 2SB745A
V_CBO
–55
V
Collector to 2SB745
–35
emitter voltage 2SB745A
V_CEO
–55
V
Emitter to base voltage
V_EBO
–5
V
Peak collector current
I_CP
–200
mA
Collector current
I_C
–50
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base
voltage
2SB745
2SB745A
I_CBO
I_CEO
V_CBO
V_CB = –10V, I_E = 0
V_CE = –10V, I_B = 0
I_C = –10µA, I_E = 0
–100 nA
–1
µA
–35
V
–55
Collector to emitter 2SB745
–35
voltage
2SB745A ^VCEO
I_C = –2mA, I_B = 0
–55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
V_EBO
h_FE*
V_CE(sat)
V_BE
f_T
Noise voltage
NV
I_E = –10µA, I_C = 0
–5
V
V_CB = –5V, I_E = 2mA
180
700
I_C = –100mA, I_B = –10mA
– 0.6
V
V_CE = –1V, I_C = –100mA
– 0.7 –1
V
V_CB = –5V, I_E = 2mA, f = 200MHz
150
MHz
V_CE = –10V, I_C = –1mA, G_V = 80dB
R_g = 100kΩ, Function = FLAT
150
mV
*_{hFE Rank classification}
Rank
R
h_FE
180 ~ 360
S
260 ~ 520
T
360 ~ 700
1