2SB726 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transistor
2SB726
Silicon PNP epitaxial planer type
For general amplification
s ^Features
q High foward current transfer ratio h_FE.
q High collector to emitter voltage V_CEO.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–80
V
Collector to emitter voltage V_CEO
–80
V
Emitter to base voltage
V_EBO
–5
V
Collector current
I_C
–100
mA
Collector power dissipation P_C
250
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
V_BE
f_T
Conditions
V_CB = –10V, I_E = 0
V_CE = –10V, I_B = 0
I_C = –10µA, I_E = 0
I_C = –2mA, I_B = 0
I_E = –10µA, I_C = 0
V_CB = –5V, I_E = –2mA
I_C = –20mA, I_B = –2mA
V_CE = –1V, I_C = –100mA
V_CB = –5V, I_E = 2mA, f = 200MHz
min
typ
max Unit
–100 nA
–1
µA
–80
V
–80
V
–5
V
180
700
– 0.6
V
–1
–1.2
V
150
MHz
*_{hFE Rank classification}
Rank
R
h_FE
180 ~ 360
S
260 ~ 520
T
360 ~ 700
1