2SB710 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors
2SB0710 (2SB710), 2SB0710A (2SB710A)
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)
■ Features
• Large collector current I_C
• Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
0.40^{+–00..0150}
3
1
2
0.16^{+–00..0160}
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SB0710 V_CBO
−30
V
(Emitter open)
2SB0710A
−60
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Collector-emitter voltage 2SB0710 V_CEO
−25
V
(Base open)
2SB0710A
−50
Emitter-base voltage (Collector open) V_EBO
−5
V
Collector current
I_C
− 0.5
A
Peak collector current
I_CP
−1
A
Collector power dissipation
Junction temperature
Storage temperature
P_C
200
mW
T_j
150
°C
T_stg −55 to +150 °C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol:
• 2SB0710: C
• 2SB0710A: D
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
2SB0710 V_CBO I_C = −10 µA, I_E = 0
−30
V
(Emitter open)
2SB0710A
−60
Collector-emitter voltage ^{2SB0710 V}CEO ^IC ^{= −10 mA, I}B ^{= 0}
−25
V
(Base open)
2SB0710A
−50
Emitter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−5
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = −20 V, I_E = 0
− 0.1 µA
Forward current transfer ratio ^*1
h_FE1 ^*2 V_CE = −10 V, I_C = −150 mA
85
340

h_FE2 V_CE = −10 V, I_C = −500 mA
40

Collector-emitter saturation voltage ^*1 V_CE(sat) I_C = −300 mA, I_B = −30 mA
− 0.35 − 0.60 V
Base-emitter saturation voltage ^*1
V_BE(sat) I_C = −300 mA, I_B = −30 mA
−1.1 −1.5
V
Transition frequency
f_T
V_CB = −10 V, I_E = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
6
15
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
*2: ^{Rank classification}
Rank
h_FE1
Marking ^2SB0710
Q
85 to 170
CQ
R
120 to 240
CR
S
170 to 340
CS
No-rank
85 to 340
C
Product of no-rank is not
classified and have no
marking symbol for rank.
symbol 2SB0710A
DQ
DR
DS
D
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJC00048CED
1