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2SB709A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type | |||
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Transistor
2SB709A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD601A
s Features
q High foward current transfer ratio hFE.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â45
V
Collector to emitter voltage VCEO
â45
V
Emitter to base voltage
VEBO
â7
V
Peak collector current
ICP
â200
mA
Collector current
IC
â100
mA
Collector power dissipation PC
200
mW
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 ~ +150
ËC
Unit: mm
0.65±0.15
+0.2
2.8 â0.3
+0.25
1.5 â0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TOâ236
EIAJ:SCâ59
Mini Type Package
s Electrical Characteristics (Ta=25ËC)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = â20V, IE = 0
VCE = â10V, IB = 0
IC = â10µA, IE = 0
â 0.1 µA
â100 µA
â45
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = â2mA, IB = 0
IE = â10µA, IC = 0
VCE = â10V, IC = â2mA
â45
V
â7
V
160
460
Collector to emitter saturation voltage VCE(sat)
IC = â100mA, IB = â10mA
â 0.3 â 0.5
V
Transition frequency
fT
VCB = â10V, IE = 1mA, f = 200MHz
80
MHz
Collector output capacitance
Cob
VCB = â10V, IE = 0, f = 1MHz
2.7
pF
*1hFE Rank classification
Rank
Q
hFE
Marking Symbol
160 ~ 260
BQ
R
210 ~ 340
BR
S
290 ~ 460
BS
1
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