2SB643 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-power general amplification)

Transistor
2SB643, 2SB644
Silicon PNP epitaxial planer type
For low-power general amplification
Complementary to 2SD638 and 2SD639
s ^Features
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to 2SB643
–30
base voltage 2SB644
V_CBO
–60
V
Collector to 2SB643
–25
V_CEO
V
emitter voltage 2SB644
–50
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–1
A
Collector current
I_C
– 0.5
A
Collector power dissipation P_C
600
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Collector cutoff current
Collector to base
voltage
2SB643
2SB644
I_CBO
I_CEO
V_CBO
Collector to emitter
voltage
2SB643
2SB644
V_CEO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
f_T
C_ob
Conditions
V_CB = –20V, I_E = 0
V_CE = –20V, I_B = 0
I_C = –10µA, I_E = 0
I_C = –2mA, I_B = 0
I_E = –10µA, I_C = 0
V_CE = –10V, I_C = –150mA^*2
V_CE = –10V, I_C = –500mA^*2
I_C = –300mA, I_B = –30mA^*2
V_CB = –10V, I_E = 10mA, f = 200MHz
V_CB = –10V, I_E = 0, f = 1MHz
*1_{hFE1 Rank classification}
Rank
Q
R
h_FE1
85 ~ 170 120 ~ 240
S
170 ~ 340
min
typ
max Unit
–100 nA
–1
µA
–30
V
–60
–25
V
–50
–7
V
85
340
40
90
– 0.35 – 0.6
V
200
MHz
6
15
pF
*2 _{Pulse measurement}
1