2SB642 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)

Transistor
2SB642
Silicon PNP epitaxial planer type
For low-power general amplification
s ^Features
q High foward current transfer ratio h_FE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
–60
V
Collector to emitter voltage V_CEO
–50
V
Emitter to base voltage
V_EBO
–7
V
Peak collector current
I_CP
–200
mA
Collector current
I_C
–100
mA
Collector power dissipation P_C
400
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_CEO
V_CBO
V_CEO
V_EBO
h_FE*
V_CE(sat)
f_T
C_ob
V_CB = –20V, I_E = 0
–1
nA
V_CE = –20V, I_B = 0
–1
µA
I_C = –10µA, I_E = 0
–60
V
I_C = –2mA, I_B = 0
–50
V
I_E = –10µA, I_C = 0
–7
V
V_CE = –10V, I_C = –2mA
160
460
I_C = –100mA, I_B = –10mA
–1
V
V_CB = –10V, I_E = 2mA, f = 200MHz
80
MHz
V_CB = –10V, I_E = 0, f = 1MHz
3.5
pF
*_{hFE Rank classification}
Rank
Q
h_FE
160 ~ 260
R
210 ~ 340
S
290 ~ 460
1