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2SB1734 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type | |||
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Transistors
2SB1734
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2706
â Features
⢠High forward current transfer ratio hFE
⢠Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
â Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
â50
V
Collector-emitter voltage (Base open) VCEO
â50
V
Emitter-base voltage (Collector open) VEBO
â5
V
Collector current
IC
â200
mA
Peak collector current
ICP
â400
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150 °C
0.40+â00..0150
3
Unit: mm
0.16+â00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+â00..0250
10Ë
Marking Symbol: AF
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
â Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = â10 µA, IE = 0
â50
Collector-emitter voltage (Base open) VCEO IC = â2 mA, IB = 0
â50
Emitter-base voltage (Collector open) VEBO IE = â10 µA, IC = 0
â5
Collector-base cutoff current (Emitter open) ICBO VCB = â20 V, IE = 0
Forward current transfer ratio
hFE VCE = â10 V, IC = â2 mA
85
Collector-emitter saturation voltage
VCE(sat) IC = â100 mA, IB = â10 mA
Transition frequency
fT
VCB = â10 V, IE = 1 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = â10 V, IE = 0, f = 1 MHz
V
V
V
â 0.1 µA
500

â300 mV
80
MHz
3
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004
SJC00322AED
1
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