2SB1699 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors
2SB1699
Silicon PNP epitaxial planar type
For power amplification
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−60
V
Collector-emitter voltage (Base open) V_CEO
−60
V
Emitter-base voltage (Collector open) V_EBO
−6
V
Collector current
I_C
−2
A
Peak collector current
I_CP
−4
A
Collector power dissipation ^*
P_C
1
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) _*: Print circuit board: Copper foil area of 1 cm² or more, and the board
thickness of 1.7 mm for the collector portion
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
0.4±0.04
45˚
3.0±0.15
Marking Symbol: 3A
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) V_CEO I_C = −1 mA, I_B = 0
−60
Collector-base cutoff current (Emitter open) I_CBO V_CB = −60 V, I_E = 0
Collector-emitter cut-off current (Base open) I_CEO V_CE = −60 V, I_B = 0
Forward current transfer ratio ^*
h_FE1 V_CE = −4 V, I_C = −1 A
80
h_FE2 V_CE = −4 V, I_C = − 0.2 A
60
h_FE3 V_CE = −4 V, I_C = −2 A
30
Collector-emitter saturation voltage ^* V_CE(sat) I_C = −2 A, I_B = −250 mA
Turn-on time
t_on
I_C = −1 A, I_B1 = 0.1 A
Storage time
t_stg
I_B2 = − 0.1 A, V_CC = −50 V
Fall time
t_f
Transition frequency
f_T
V_CB = −10 V, I_E = 50 mA, f = 200 MHz
−100
−100
250
− 0.5
0.2
0.4
0.1
180
V
µA
µA

V
µs
µs
µs
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: April 2004
SJC00304AED
1