2SB1693 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Transistors
2SB1693
Silicon PNP epitaxial planar type
For general amplification
■ Features
• Large collector current I_C
• Mini type package, allowing downsizing of the equipment and auto-
matic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
−40
V
Collector-emitter voltage (Base open) V_CEO
−20
V
Emitter-base voltage (Collector open) V_EBO
−15
V
Collector current
I_C
− 0.5
A
Peak collector current
I_CP
−1
A
Collector power dissipation
P_C
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Marking Symbol: 3D
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open) V_CBO I_C = −10 µA, I_E = 0
−40
Collector-emitter voltage (Base open) V_CEO I_C = −2 mA, I_B = 0
−20
Emitter-base voltage (Collector open) V_EBO I_E = −10 µA, I_C = 0
−15
Forward current transfer ratio ^*
h_FE1 V_CE = −2 V, I_C = −100 mA
160
h_FE2 V_CE = −2 V, I_C = −500 mA
100
Collector-emitter saturation voltage ^* V_CE(sat) I_C = −100 mA, I_B = −10 mA
I_C = − 0.5 A, I_B = −25 mA
Transition frequency
f_T
V_CB = −5 V, I_E = 50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = −10 V, I_E = 0, f = 1 MHz
Typ Max
560
−60
−210
170
16
−300
−500
Unit
V
V
V

mV
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: September 2003
SJC00292AED
1