2SB1679 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

Transistors
2SB1679
Silicon PNP epitaxial planer type
For low-frequency amplification
I Features
• Large current capacitance
• Low collector to emitter saturation voltage
• Small type package, allowing downsizing and thinning of the
equipment.
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
−15
V
V_CEO
−10
V
V_EBO
−7
V
I_CP
− 0.5
A
I_C
−1
A
P_C
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
0.3^{+–00..01}
3
Unit: mm
0.15^{+–00..0150}
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 3V
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio ^*1
Collector to emitter saturation voltage ^*1
Base to emitter saturation voltage ^*1
Transition frequency
Collector output capacitance
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1 ^*2
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB = −10 V, I_E = 0
I_C = −10 µA, I_E = 0
I_C = −1 mA, I_B = 0
I_E = −10 µA, I_C = 0
V_CE = −2 V, I_C = − 0.5 A
V_CE = −2 V, I_C = −1 A
I_C = − 0.4 A, I_B = −8 mA
I_C = − 0.4 A, I_B = −8 mA
V_CB = −10 V, I_E = 50 mA, f = 200 MHz
V_CB = −10 V, I_E = 0, f = 1 MHz
Note) *1: Pulse measurement
*2: Rank classification
Rank
R
S
h_FE1
130 to 220 180 to 350
Min Typ Max
−100
−15
−10
−7
130
350
60
− 0.16 − 0.3
− 0.8 −1.2
130
22
Unit
nA
V
V
V
V
V
MHz
pF
1